Invention Grant
- Patent Title: Semiconductor device
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Application No.: US18348478Application Date: 2023-07-07
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Publication No.: US12125779B2Publication Date: 2024-10-22
- Inventor: Hiroaki Matsubara , Kaori Sumitomo , Maki Moroi , Naoki Kinoshita
- Applicant: ROHM CO., LTD.
- Applicant Address: JP Kyoto
- Assignee: ROHM CO., LTD.
- Current Assignee: ROHM CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: HSML P.C.
- Priority: JP 20123072 2020.07.17
- Main IPC: H01L23/498
- IPC: H01L23/498

Abstract:
A semiconductor device includes: a chip; a circuit element formed in the chip; an insulating layer formed over the chip so as to cover the circuit element; a multilayer wiring region formed in the insulating layer and including a plurality of wirings laminated and arranged in a thickness direction of the insulating layer so as to be electrically connected to the circuit element; at least one insulating region which does not include the wirings in an entire region in the thickness direction of the insulating layer and is formed in a region outside the multilayer wiring region in the insulating layer; and at least one terminal electrode disposed over the insulating layer so as to face the chip with the at least one insulating region interposed between the at least one terminal electrode and the chip.
Public/Granted literature
- US20230352392A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-11-02
Information query
IPC分类: