Invention Grant
- Patent Title: Die on die bonding structure
-
Application No.: US17883999Application Date: 2022-08-09
-
Publication No.: US12125819B2Publication Date: 2024-10-22
- Inventor: Ming-Fa Chen , Chao-Wen Shih , Sung-Feng Yeh
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US17186984 2021.02.26
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/00 ; H01L23/48 ; H01L25/00 ; H01L25/065 ; H01L25/18 ; H01L21/304 ; H01L21/306
Abstract:
A package structure and method of manufacturing is provided, whereby a bonding dielectric material layer is provided at a back side of a wafer, a bonding dielectric material layer is provided at a front side of an adjoining wafer, and wherein the bonding dielectric material layers are fusion bonded to each other.
Public/Granted literature
- US20220384314A1 DIE ON DIE BONDING STRUCTURE Public/Granted day:2022-12-01
Information query
IPC分类:
