Invention Grant
- Patent Title: Electronic device
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Application No.: US16958157Application Date: 2020-04-29
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Publication No.: US12125845B2Publication Date: 2024-10-22
- Inventor: Hang Liao , Chunhua Zhou
- Applicant: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Applicant Address: CN Zhuhai
- Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Current Assignee: INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD.
- Current Assignee Address: CN Zhuhai
- Agency: JCIPRNET
- International Application: PCT/CN2020/087765 2020.04.29
- International Announcement: WO2021/217494A 2021.11.04
- Date entered country: 2020-06-26
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L21/8252 ; H01L27/06 ; H01L29/40 ; H01L29/66

Abstract:
A semiconductor structure includes a first nitride semiconductor layer; a second nitride semiconductor layer and a first conductive structure. The second nitride semiconductor layer is disposed on the first nitride semiconductor layer. The first conductive structure is disposed on the second nitride semiconductor layer. The first conductive structure functions as one of a drain and a source of a transistor and one of an anode and a cathode of a diode.
Public/Granted literature
- US20220375926A1 ELECTRONIC DEVICE Public/Granted day:2022-11-24
Information query
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