Invention Grant
- Patent Title: Method of manufacturing light-emitting device and light-emitting device
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Application No.: US17078839Application Date: 2020-10-23
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Publication No.: US12125939B2Publication Date: 2024-10-22
- Inventor: Hidetoshi Tanaka
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan
- Agency: Foley & Lardner LLP
- Priority: JP 19197184 2019.10.30
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/50 ; H01L33/52

Abstract:
A method of manufacturing a light-emitting device includes providing a structure body including a silicon substrate having a first portion, a second portion, and a third portion between the first portion and the second portion, and a first semiconductor layered body including a first light-emitting layer, the first semiconductor layered body being disposed on or above the silicon substrate. The method includes forming a first resin layer covering a lateral side of the silicon substrate and a lateral side of the first semiconductor layered body. The method includes a removal step of removing the first portion to expose a first surface of the first semiconductor layered body, removing the second portion to expose a second surface of the first semiconductor layered body, and leaving the third portion. The method includes forming a first wavelength conversion member on or above the first surface exposed by the removal of the first portion.
Public/Granted literature
- US20210135045A1 METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE Public/Granted day:2021-05-06
Information query
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