Invention Grant
- Patent Title: Method for wafer backside polishing
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Application No.: US17461040Application Date: 2021-08-30
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Publication No.: US12131896B2Publication Date: 2024-10-29
- Inventor: Kei-Wei Chen , Chih Hung Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT LAW
- Agent Anthony King
- Main IPC: H01L21/02
- IPC: H01L21/02 ; A46B13/00 ; B08B1/12 ; B08B1/32 ; B24B7/22

Abstract:
A method of cleaning and polishing a backside surface of a semiconductor wafer is provided. The method includes placing an abrasive brush, comprising an abrasive tape wound around an outer surface of a brush member of the abrasive brush, on the backside surface of the semiconductor wafer. The method also includes rotating the brush member to polish the backside surface of the semiconductor wafer by abrasive grains formed on the abrasive tape and to clean the backside surface of the semiconductor wafer by the brush member which is not covered by the abrasive tape.
Public/Granted literature
- US20230064958A1 METHOD FOR WAFER BACKSIDE POLISHING Public/Granted day:2023-03-02
Information query
IPC分类: