Invention Grant
- Patent Title: Bonding wire for semiconductor devices
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Application No.: US18685871Application Date: 2022-10-18
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Publication No.: US12132026B2Publication Date: 2024-10-29
- Inventor: Tomohiro Uno , Tetsuya Oyamada , Daizo Oda , Motoki Eto
- Applicant: NIPPON STEEL Chemical & Material Co., Ltd. , NIPPON MICROMETAL CORPORATION
- Applicant Address: JP Tokyo
- Assignee: NIPPON STEEL Chemical & Material Co., Ltd.,NIPPON MICROMETAL CORPORATION
- Current Assignee: NIPPON STEEL Chemical & Material Co., Ltd.,NIPPON MICROMETAL CORPORATION
- Current Assignee Address: JP Tokyo; JP Saitama
- Agency: Rimon P.C.
- Priority: JP 22101611 2022.06.24
- International Application: PCT/JP2022/038688 2022.10.18
- International Announcement: WO2023/248491A 2023.12.28
- Date entered country: 2024-02-22
- Main IPC: H01L23/00
- IPC: H01L23/00 ; G01N23/203 ; G01N23/2276

Abstract:
A bonding wire includes a core material of Cu or Cu alloy, and a coating layer containing a conductive metal other than Cu on a surface of the core material. In a concentration profile in a depth direction of the wire obtained, an average value of sum of a Pd concentration CPd (atomic %) and an Ni concentration CNi (atomic %) for measurement points in the coating layer is 50 atomic % or more, an average value of a ratio of CPd to CNi for measurement points in the coating layer is from 0.2 to 20 and a thickness of the coating layer is from 20 nm to 180 nm. An Au concentration CAu at a surface of the wire is from 10 atomic % to 85 atomic %. An average size of crystal grains in a circumferential direction of the wire is from 35 nm to 200 nm.
Public/Granted literature
- US12166006B2 Bonding wire for semiconductor devices Public/Granted day:2024-12-10
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