Invention Grant
- Patent Title: Integrating passive devices in package structures
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Application No.: US17648161Application Date: 2022-01-17
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Publication No.: US12132029B2Publication Date: 2024-10-29
- Inventor: Chih-Chia Hu , Ming-Fa Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- The original application number of the division: US16028763 2018.07.06
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L23/00 ; H01L23/538 ; H01L23/552 ; H01L25/00 ; H01L25/03 ; H01L25/18

Abstract:
A method includes bonding a first device die with a second device die. The second device die is over the first device die. A passive device is formed in a combined structure including the first and the second device dies. The passive device includes a first and a second end. A gap-filling material is formed over the first device die, with the gap-filling material including portions on opposite sides of the second device die. The method further includes performing a planarization to reveal the second device die, with a remaining portion of the gap-filling material forming an isolation region, forming a first and a second through-vias penetrating through the isolation region to electrically couple to the first device die, and forming a first and a second electrical connectors electrically coupling to the first end and the second end of the passive device.
Public/Granted literature
- US20220139885A1 Integrating Passive Devices in Package Structures Public/Granted day:2022-05-05
Information query
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