Invention Grant
- Patent Title: Semiconductor device including an upper contact in contact with a side surface of an upper gate structure
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Application No.: US16734786Application Date: 2020-01-06
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Publication No.: US12132044B2Publication Date: 2024-10-29
- Inventor: Sung Min Kim , Dae Won Ha
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: F. CHAU & ASSOCIATES, LLC
- Priority: KR 20190027488 2019.03.11
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L21/768 ; H01L21/822 ; H01L23/528 ; H01L27/088 ; H01L27/146 ; H01L29/417 ; H01L29/78

Abstract:
A semiconductor device including: a lower semiconductor substrate; an upper semiconductor substrate overlapping the lower semiconductor substrate, the upper semiconductor substrate including a first surface and a second surface opposite to the first surface; an upper gate structure on the first surface of the upper semiconductor substrate; a first interlayer insulation film which covers the upper gate structure, wherein the first interlayer insulation film is between the lower semiconductor substrate and the upper semiconductor substrate; and an upper contact connected to the lower semiconductor substrate, wherein the upper contact is on a side surface of the upper gate structure, wherein the upper contact includes a first portion penetrating the upper semiconductor substrate, and a second portion having a side surface adjacent to the side surface of the upper gate structure, and a width of the first portion decreases toward the second surface.
Public/Granted literature
- US20200294995A1 SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME Public/Granted day:2020-09-17
Information query
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