A silicon carbide semiconductor device has a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, a gate insulating film, gate electrodes, first electrodes, a second electrode, and a gate pad portion configured by a gate electrode pad and a connecting portion. The second semiconductor layer includes a first region facing the connecting portion and a second region facing a corner portion of the gate electrode pad, and the first and second regions are free of the second semiconductor regions. The oxide film is provided on surfaces of the second semiconductor regions and the first and second regions, and the oxide film and the gate insulating film are made of a same material.