Invention Grant
- Patent Title: Apparatuses including multiple channel materials within a tier stack
-
Application No.: US17814164Application Date: 2022-07-21
-
Publication No.: US12132116B2Publication Date: 2024-10-29
- Inventor: Akira Goda , Marc Aoulaiche
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: TraskBritt
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/267 ; H01L29/66 ; H01L29/786 ; H10B41/27
Abstract:
An apparatus comprises a stack comprising an alternating sequence of dielectric structures and conductive structures, a first channel material extending vertically through the stack, and a second channel material adjacent the first channel material and extending vertically through the stack. The first channel material has a first band gap and the second channel material has a second band gap that is relatively larger than the first band gap. The apparatus further comprises a conductive plug structure adjacent to each of the first channel material and the second channel material, and a conductive line structure adjacent to the conductive plug structure. Methods of forming the apparatus, memory devices, and electronic systems are also described.
Public/Granted literature
- US20220359767A1 APPARATUSES INCLUDING MULTIPLE CHANNEL MATERIALS WITHIN A TIER STACK Public/Granted day:2022-11-10
Information query
IPC分类:
