Invention Grant
- Patent Title: Insulated circuit substrate manufacturing method
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Application No.: US17913212Application Date: 2021-03-24
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Publication No.: US12133338B2Publication Date: 2024-10-29
- Inventor: Yoshiaki Sakaniwa , Toyo Ohashi
- Applicant: MITSUBISHI MATERIALS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee: MITSUBISHI MATERIALS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Locke Lord LLP
- Priority: JP 20053650 2020.03.25
- International Application: PCT/JP2021/012169 2021.03.24
- International Announcement: WO2021/193701A 2021.09.30
- Date entered country: 2022-09-21
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H01L21/48 ; H05K1/03 ; H05K3/10 ; H05K3/20 ; H05K3/44 ; H05K3/00

Abstract:
An insulated circuit substrate manufacturing method of the present invention includes a metal piece disposing step of disposing the metal piece in a circuit pattern shape on a resin material serving as the insulating resin layer and a bonding step of bonding the insulating resin layer and the metal piece by pressurizing and heating the resin material and the metal piece at least in a laminating direction. In the bonding step, the metal piece and the resin material are pressurized in the laminating direction by a pressurizing jig that includes a cushion material disposed on a side of the metal piece and a guide wall portion disposed at a position facing a peripheral portion of the cushion material, and the peripheral portion of the cushion material is brought into contact with the guide wall portion during pressurization.
Public/Granted literature
- US20230127557A1 INSULATED CIRCUIT SUBSTRATE MANUFACTURING METHOD Public/Granted day:2023-04-27
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