Invention Grant
- Patent Title: Capacitor structure and method of forming the same
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Application No.: US17550604Application Date: 2021-12-14
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Publication No.: US12136449B2Publication Date: 2024-11-05
- Inventor: Liang Chen , Cheng Gan , Xin Wu , Wei Liu
- Applicant: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Applicant Address: CN Wuhan
- Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee: YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Current Assignee Address: CN Wuhan
- Agency: BAYES PLLC
- Main IPC: G11C11/24
- IPC: G11C11/24 ; G11C11/404 ; H01L49/02 ; H10B12/00
Abstract:
A capacitor is provided. The capacitor includes a substrate, at least two conductive plates formed in the substrate and extending into the substrate, at least one insulating structure formed between two adjacent conductive plates of the at least two conductive plates and extending into the substrate, and a plurality of contacts, each extending into respective one of the at least two conductive plates.
Public/Granted literature
- US20220101906A1 NOVEL CAPACITOR STRUCTURE AND METHOD OF FORMING THE SAME Public/Granted day:2022-03-31
Information query
