Invention Grant
- Patent Title: Systems, methods and media of optimization of temporary read errors in 3D NAND memory devices
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Application No.: US17879593Application Date: 2022-08-02
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Publication No.: US12136453B2Publication Date: 2024-11-05
- Inventor: Jianquan Jia , Kaikai You , Xinlei Jia , Wen Zhou , Kun Yang , Jiayin Han , Pan Xu , Zhe Luo , Da Li , Lei Jin
- Applicant: Yangtze Memory Technologies Co., Ltd.
- Applicant Address: CN Hubei
- Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee: Yangtze Memory Technologies Co., Ltd.
- Current Assignee Address: CN Hubei
- Agency: Conley Rose, P.C.
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C11/4074 ; G11C11/4076 ; G11C11/408 ; G11C11/4096

Abstract:
The present disclosure provides systems, methods and media of optimization of temporary read errors (TRE) in three-dimensional (3D) NAND memory devices. The (3D) NAND memory devices comprises a plurality of memory cells arranged as an array of NAND memory strings, a plurality of word lines couple to the memory cells, and a controller. The controller is configured to determine whether a next read operation is a first read operation of the memory device after recovering from an idle state, and in response to a positive result of the determination, control the memory device to perform an extended pre-phase of the first read operation before a read-phase of the first read operation.
Public/Granted literature
- US20240046980A1 SYSTEMS, METHODS AND MEDIA OF OPTIMIZATION OF TEMPORARY READ ERRORS IN 3D NAND MEMORY DEVICES Public/Granted day:2024-02-08
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