Invention Grant
- Patent Title: Hybrid resistors including resistor bodies with different drift effects
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Application No.: US17708094Application Date: 2022-03-30
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Publication No.: US12136507B2Publication Date: 2024-11-05
- Inventor: Qiang Bai , Kumar Singh Sudhish , Biying Guan , Venkataramani Chandrasekar , Karan Khullar , Lingfen Kong
- Applicant: GlobalFoundries Singapore Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: GlobalFoundries Singapore Pte. Ltd.
- Current Assignee: GlobalFoundries Singapore Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Thompson Hine LLP
- Agent Anthony Canale
- Main IPC: H01C17/00
- IPC: H01C17/00 ; H01L23/522 ; H01L49/02
Abstract:
Structures for an on-chip resistor and methods of forming a structure for an on-chip resistor. The structure includes a first resistor body and a second resistor body coupled to the first resistor body. The first resistor body contains a first material having a first drift effect. The second resistor body contains a second material having a second drift effect that is different from the first drift effect.
Public/Granted literature
- US20230317324A1 HYBRID RESISTORS INCLUDING RESISTOR BODIES WITH DIFFERENT DRIFT EFFECTS Public/Granted day:2023-10-05
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