Invention Grant
- Patent Title: Semiconductor structure and method for forming same
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Application No.: US17648964Application Date: 2022-01-26
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Publication No.: US12136568B2Publication Date: 2024-11-05
- Inventor: Luguang Wang
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Syncoda LLC
- Agent Feng Ma
- Priority: CN202110357903.5 20210401
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768

Abstract:
A semiconductor structure includes: a base including a substrate and a dielectric layer, herein the substrate having a front surface and a back surface that are oppositely arranged, and the dielectric layer is located on the front surface; a connecting hole penetrating the substrate and extending to the dielectric layer; a connecting structure, located in the connecting hole; and an insulating structure, located between the connecting structure and the inner wall of the connecting hole. The insulating structure, the inner wall of the connecting hole, and the connecting structure define an air gap.
Public/Granted literature
- US20220319923A1 SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING SAME Public/Granted day:2022-10-06
Information query
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