A method for manufacturing a semiconductor device includes the steps of a first separation process of separating the semiconductor layer from the first substrate by bringing a pick-up substrate into close contact with the semiconductor layer and then moving the pick-up substrate away from the first substrate, pressing of pressing the semiconductor layer that is in close contact with the pick-up substrate to the second substrate, temperature maintenance of maintaining temperatures of contact surfaces of the semiconductor layer and the second substrate at a temperature higher than room temperature while pressing the semiconductor layer onto the second substrate, and a second separation process of separating the semiconductor layer from the pick-up substrate after the temperatures of the contact surfaces are maintained at the temperature higher than room temperature.