Coupled polysilicon guard rings for enhancing breakdown voltage in a power semiconductor device are presented herein. Polysilicon guard rings are disposed above the power device drift region and electrically coupled to power device regions (e.g., device diffusions) so as to spread electric fields associated with an operating voltage. Additionally, PN junctions (i.e., p-type and n-type junctions) are formed within the polysilicon guard rings to operate in reverse bias with a low leakage current between the power device regions (e.g., device diffusions). Low leakage current may advantageously enhance the electric field spreading without deleteriously affecting existing (i.e., normal) power device performance; and enhanced electric field spreading may in turn reduce breakdown-voltage drift.