Invention Grant
- Patent Title: Silicon carbide wafer and semiconductor device applied the same
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Application No.: US17692528Application Date: 2022-03-11
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Publication No.: US12136653B2Publication Date: 2024-11-05
- Inventor: Jung Woo Choi , Jong Hwi Park , Jung-Gyu Kim , Jung Doo Seo , Kap-Ryeol Ku
- Applicant: SENIC Inc.
- Applicant Address: KR Cheonan-si
- Assignee: SENIC Inc.
- Current Assignee: SENIC Inc.
- Current Assignee Address: KR Cheonan-si
- Agency: NSIP Law
- Priority: KR10-2021-0041021 20210330
- Main IPC: H01L29/16
- IPC: H01L29/16 ; H01L21/02
Abstract:
In a silicon carbide wafer in an embodiment, in the photoluminescence signal intensity spectrum obtained after irradiating a laser on one surface of the silicon carbide wafer, the number of peak signals having an intensity more than 1.2 times the average signal intensity of the spectrum is 1/cm2 or less.
Public/Granted literature
- US20220320296A1 SILICON CARBIDE WAFER AND SEMICONDUCTOR DEVICE APPLIED THE SAME Public/Granted day:2022-10-06
Information query
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