Invention Grant
- Patent Title: Semiconductor device and method for producing the same
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Application No.: US18296778Application Date: 2023-04-06
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Publication No.: US12136664B2Publication Date: 2024-11-05
- Inventor: Masayuki Aoike
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Kyoto-fu
- Agency: Studebaker & Brackett PC
- Priority: JP2019-115560 20190621,JP2020-040801 20200310
- Main IPC: H01L23/373
- IPC: H01L23/373 ; H01L21/50 ; H01L23/00 ; H01L23/498 ; H01L29/737

Abstract:
A semiconductor device includes a substrate, a circuit element disposed on or above the upper surface of the substrate, an electrode disposed on or above the upper surface of the substrate and connected to the circuit element, and a conductor pillar bump for external connection which is disposed on the substrate and electrically connected to the electrode or the circuit element. The substrate includes a first base and a second base disposed on the first base. The circuit element and the electrode are disposed on the second base. The first base has lower thermal resistance than the second base.
Public/Granted literature
- US20230246094A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2023-08-03
Information query
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