Provided is a semiconductor device that carries current in both directions and that enables accurate detection of current flowing through the semiconductor device. The semiconductor device includes a transistor and a diode both formed in a common semiconductor base body. The semiconductor device includes: a first main surface; a second main surface; a first electrode; a second electrode; a third electrode for current sensing; and a fourth electrode for current sensing. The semiconductor base body includes: a transistor region in which the transistor is formed; a diode region in which the diode is formed; and a separation region formed between the transistor region and the diode region. The third electrode is provided on the first main surface in the transistor region at a distance from the first electrode. The fourth electrode is provided on the first main surface in the diode region at a distance from the first electrode.