Invention Grant
- Patent Title: Transistor
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Application No.: US17668254Application Date: 2022-02-09
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Publication No.: US12136667B2Publication Date: 2024-11-05
- Inventor: Blend Mohamad , René Escoffier
- Applicant: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Applicant Address: FR Paris
- Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee: Commissariat à l'Énergie Atomique et aux Énergies Alternatives
- Current Assignee Address: FR Paris
- Agency: Wolf, Greenfield & Sacks, P.C.
- Priority: FR2101480 20210216
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/423 ; H01L29/66 ; H01L29/778 ; H01L21/8258 ; H01L27/088
Abstract:
A device including a first transistor, having a gate region partially penetrating into a gallium nitride layer, and a second transistor located inside of the gate region of the first transistor.
Public/Granted literature
- US20220262938A1 TRANSISTOR Public/Granted day:2022-08-18
Information query
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