Invention Grant
- Patent Title: Control circuit for transistor with floating source node
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Application No.: US17972713Application Date: 2022-10-25
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Publication No.: US12136914B2Publication Date: 2024-11-05
- Inventor: Kevin David Moran , Guoming George Zhu
- Applicant: Board of Trustees of Michigan State University
- Applicant Address: US MI East Lansing
- Assignee: Board of Trustees of Michigan State University
- Current Assignee: Board of Trustees of Michigan State University
- Current Assignee Address: US MI East Lansing
- Agency: Harness, Dickey & Pierce, PLC
- Main IPC: H03K17/687
- IPC: H03K17/687 ; H01F38/12

Abstract:
A control circuit is provided for a field-effect transistor with a floating source node. The control circuit includes: a charge storage device electrically connected between a gate of the field-effect transistor and a DC power supply; a gate control circuit electrically connected between the charge storage device and the gate of the field-effect transistor; and a charge control circuit electrically connected between the DC power supply and the charge storage device. The gate control circuit is configured to receive a gate control signal and operates to turn on the field-effect transistor during on time of the gate control signal and turn off the field-effect transistor during off time of the gate control signal. The charge control circuit is also configured to receive the gate control signal and operates to charge the charge storage device with power from the DC power supply during off time of the gate control signal.
Public/Granted literature
- US20230133293A1 Control Circuit For Transistor With Floating Source Node Public/Granted day:2023-05-04
Information query
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