Invention Grant
- Patent Title: Defect measurement method
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Application No.: US17143134Application Date: 2021-01-06
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Publication No.: US12142537B2Publication Date: 2024-11-12
- Inventor: Burn-Jeng Lin , Chrong-Jung Lin , Ya-Chin King , Yi-Pei Tsai
- Applicant: NATIONAL TSING HUA UNIVERSITY
- Applicant Address: TW Hsinchu
- Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee: NATIONAL TSING HUA UNIVERSITY
- Current Assignee Address: TW Hsinchu
- Agency: CKC & Partners Co., LLC
- Priority: TW108112013 20190403
- Main IPC: H01L29/72
- IPC: H01L29/72 ; H01L21/66 ; H01L23/58 ; H01L29/66 ; H01L29/78 ; H01L29/788
Abstract:
A micro detector includes a substrate, a fin structure, a floating gate, a sensing gate, a reading gate and an energy sensing film. The fin structure is located on the substrate. The floating gate is located on the substrate, and the floating gate is vertically and crossly arranged with the fin structure. The sensing gate is located at one side of the fin structure. The reading gate is located at the other side of the fin structure. The energy sensing film is located on the sensing gate and is connected with the sensing gate. An induced charge is generated when the energy sensing film is contacted with an external energy source, and the induced charge is stored in the floating gate.
Public/Granted literature
- US20210159129A1 DEFECT MEASUREMENT METHOD Public/Granted day:2021-05-27
Information query
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