An integrated circuit includes a substrate and a semiconductor material layer over the substrate. The integrated circuit includes a first source structure in the semiconductor material layer. The first source structure includes a first doped well. The integrated circuit includes a drain structure in the semiconductor material layer. The drain structure includes a second doped well. The integrated circuit includes a second source structure in the semiconductor material layer. The second source structure includes a third doped well. The drain structure is between the first source structure and the second source structure. The integrated circuit includes a first deep trench isolation (DTI) extending through the first doped well; and a first thermal contact extending through the first DTI. The thermal contact is in direct contact with the substrate. The first DTI is between the thermal contact and the first doped well.