Invention Grant
- Patent Title: Backside power distribution network semiconductor package and method of manufacturing the same
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Application No.: US18457000Application Date: 2023-08-28
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Publication No.: US12142564B2Publication Date: 2024-11-12
- Inventor: Saehan Park , Hoonseok Seo , Jeonghyuk Yim , Ki-Il Kim , Gil Hwan Son
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L21/768 ; H01L21/822 ; H01L23/00 ; H01L23/48 ; H01L27/06
Abstract:
Provided is a semiconductor architecture including a carrier substrate, a landing pad included in the carrier substrate, a first semiconductor device provided on a first surface of the carrier substrate, the first semiconductor device including a first component provided on the landing pad, and a second semiconductor device provided on a second surface of the carrier substrate, a second component protruding from the second semiconductor device being provided on the landing pad.
Public/Granted literature
- US20230411294A1 BACKSIDE POWER DISTRIBUTION NETWORK SEMICONDUCTOR PACKAGE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2023-12-21
Information query
IPC分类:
