Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
-
Application No.: US17660324Application Date: 2022-04-22
-
Publication No.: US12142605B2Publication Date: 2024-11-12
- Inventor: Koichi Nishi , Shinya Soneda , Akihiko Furukawa
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2021-121367 20210726
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L23/482 ; H01L29/739 ; H01L49/02

Abstract:
All of four of built-in gate resistance trenches function as practical built-in gate resistance trenches. A first end portion of each of four of the built-in gate resistance trenches is electrically connected to a wiring side contact region of a gate wiring via a wiring contact. A second end portion of each of four of the built-in gate resistance trenches is electrically connected to a pad side contact region of a gate pad via a pad contact. In each of four of the built-in gate resistance trenches, a distance between the wiring contact and the pad contact is defined as an inter-contact distance.
Public/Granted literature
- US20230027990A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2023-01-26
Information query
IPC分类: