Invention Grant
- Patent Title: Method of manufacturing semiconductor devices and semiconductor devices
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Application No.: US17390817Application Date: 2021-07-30
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Publication No.: US12142682B2Publication Date: 2024-11-12
- Inventor: Chandrashekhar Prakash Savant , Kin Shun Chong , Tien-Wei Yu , Chia-Ming Tsai , Ming-Te Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66 ; H01L29/78
Abstract:
In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a shield layer is formed over the first conductive layer forming a bilayer structure, a capping layer is formed over the shield layer, a first annealing operation is performed after the capping layer is formed, the capping layer is removed after the first annealing operation, and a gate electrode layer is formed after the capping layer is removed.
Public/Granted literature
- US20220059684A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES Public/Granted day:2022-02-24
Information query
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