Invention Grant
- Patent Title: Power amplifier modules including semiconductor resistor and tantalum nitride terminated through wafer via
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Application No.: US17820497Application Date: 2022-08-17
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Publication No.: US12143077B2Publication Date: 2024-11-12
- Inventor: Peter J. Zampardi, Jr. , Hongxiao Shao , Tin Myint Ko , Matthew Thomas Ozalas , Hong Shen , Mehran Janani , Jens Albrecht Riege , Hsiang-Chih Sun , David Steven Ripley , Philip John Lehtola
- Applicant: Skyworks Solutions, Inc.
- Applicant Address: US CA Irvine
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US CA Irvine
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L27/082
- IPC: H01L27/082 ; H01L21/48 ; H01L21/56 ; H01L21/66 ; H01L21/768 ; H01L21/78 ; H01L21/8249 ; H01L21/8252 ; H01L23/00 ; H01L23/31 ; H01L23/48 ; H01L23/498 ; H01L23/50 ; H01L23/522 ; H01L23/552 ; H01L23/66 ; H01L27/06 ; H01L29/08 ; H01L29/20 ; H01L29/205 ; H01L29/36 ; H01L29/66 ; H01L29/737 ; H01L29/812 ; H03F1/02 ; H03F3/19 ; H03F3/195 ; H03F3/21 ; H03F3/213 ; H03F3/24 ; H03F3/60 ; H01L27/092 ; H01L29/06 ; H01L29/10 ; H01L29/8605 ; H03F1/56 ; H03F3/187 ; H03F3/347 ; H03F3/45
Abstract:
One aspect of this disclosure is a power amplifier module that includes a power amplifier, a semiconductor resistor, a tantalum nitride terminated through wafer via, and a conductive layer electrically connected to the power amplifier. The semiconductor resistor can include a resistive layer that includes a same material as a layer of a bipolar transistor of the power amplifier. A portion of the conductive layer can be in the tantalum nitride terminated through wafer via. The conductive layer and the power amplifier can be on opposing sides of a semiconductor substrate. Other embodiments of the module are provided along with related methods and components thereof.
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