A plasma processing apparatus includes: a plasma processing chamber; a first conductive member disposed in the plasma processing chamber and having a first surface; a second conductive member having a second surface facing the first surface of the first conductive member; a third member disposed on at least one selected from the group of the first conductive member and the second conductive member and having a shape that varies according to a temperature change of the third member; and a control mechanism configured to change a temperature of the third member.