Invention Grant
- Patent Title: Fuse structure and manufacturing method thereof
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Application No.: US17516640Application Date: 2021-11-01
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Publication No.: US12148695B2Publication Date: 2024-11-19
- Inventor: Xiong Li
- Applicant: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Applicant Address: CN Hefei
- Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee: CHANGXIN MEMORY TECHNOLOGIES, INC.
- Current Assignee Address: CN Hefei
- Agency: Kilpatrick Townsend & Stockton LLP
- Priority: CN202110553275.8 20210520
- Main IPC: H01L23/525
- IPC: H01L23/525 ; H10B20/25

Abstract:
A fuse structure and a manufacturing method thereof are provided. The fuse structure includes: a substrate; an active region positioned above the substrate; a fuse gate structure surrounding a circumferential outer surface of the active region and electrically connected to a first power source; and a control gate structure surrounding a circumferential outer surface of the fuse gate structure and electrically connected to a second power source. A voltage of the first power source is greater than that of the second power source.
Public/Granted literature
- US20220375857A1 FUSE STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2022-11-24
Information query
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