Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
-
Application No.: US17123982Application Date: 2020-12-16
-
Publication No.: US12148828B2Publication Date: 2024-11-19
- Inventor: Georgios Vellianitis , Chun-Chieh Lu , Sai-Hooi Yeong , Mauricio Manfrini
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/383 ; H01L21/447 ; H01L27/12 ; H01L29/49 ; H01L29/66 ; H01L29/786
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a gate layer, a low-doping semiconductor layer, a crystalline ferroelectric layer and source and drain terminals. The crystalline ferroelectric layer is disposed between the gate layer and the low-doping semiconductor layer. The source terminal and the drain terminal are disposed on the low-doping semiconductor layer.
Public/Granted literature
- US20210399136A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-12-23
Information query
IPC分类:
