Invention Grant
- Patent Title: Method of manufacturing semiconductor device including ferroelectric layer having nano crystals
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Application No.: US17461593Application Date: 2021-08-30
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Publication No.: US12148829B2Publication Date: 2024-11-19
- Inventor: Wilman Tsai , Ling-Yen Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: STUDEBAKER & BRACKETT PC
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L21/8234 ; H01L27/088 ; H01L29/51 ; H01L29/66
Abstract:
In a method of manufacturing a negative capacitance structure, a ferroelectric dielectric layer is formed over a first conductive layer disposed over a substrate, and a second conductive layer is formed over the ferroelectric dielectric layer. The ferroelectric dielectric layer includes an amorphous layer and crystals.
Public/Granted literature
- US20210391472A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2021-12-16
Information query
IPC分类:
