Invention Grant
- Patent Title: FinFET structure having a gate contact above a metal gate and straddling the boundary of an active region
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Application No.: US17226563Application Date: 2021-04-09
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Publication No.: US12148834B2Publication Date: 2024-11-19
- Inventor: Xinfang Liu , Miao Xu , Yanxiang Liu
- Applicant: Huawei Technologies Co., Ltd.
- Applicant Address: CN Shenzhen
- Assignee: Huawei Technologies Co., Ltd.
- Current Assignee: Huawei Technologies Co., Ltd.
- Current Assignee Address: CN Shenzhen
- Agency: Conley Rose, P.C.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/28 ; H01L21/768 ; H01L21/8234 ; H01L27/088 ; H01L29/08 ; H01L29/49 ; H01L29/66
Abstract:
A field-effect transistor structure includes a semiconductor substrate, a metal gate, a metal trench for source, a metal trench for drain, an etching-stop layer, and a gate contact. The etching-stop layer is overlaid on the metal trench for source and the metal trench for drain. The gate contact is above an active region.
Public/Granted literature
- US20210257494A1 Structure and Manufacturing Method of Field-Effect Transistor with Low Gate Resistance Public/Granted day:2021-08-19
Information query
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