Invention Grant
- Patent Title: Photodetectors, preparation methods for photodetectors, photodetector arrays, and photodetection terminals
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Application No.: US17318748Application Date: 2021-05-12
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Publication No.: US12148845B2Publication Date: 2024-11-19
- Inventor: Kai Zang , Shuang Li , Jieyang Jia
- Applicant: Shenzhen Adaps Photonics Technology Co. LTD.
- Applicant Address: CN Shenzhen
- Assignee: Shenzhen Adaps Photonics Technology Co. LTD.
- Current Assignee: Shenzhen Adaps Photonics Technology Co. LTD.
- Current Assignee Address: CN Shenzhen
- Priority: CN201811339767.1 20181112
- Main IPC: H01L31/02
- IPC: H01L31/02 ; H01L31/0216 ; H01L31/0352 ; H01L31/107

Abstract:
A photodetector, a preparation method for a photodetector, a photodetector array and a photodetection terminal. The photodetector comprises a substrate (11) and an optical resonant cavity (10) formed on the substrate (11). The optical resonant cavity (10) may comprise: a light absorption layer (13) having a light-entrance outer surface and a bottom outer surface which are opposite to each other, and an outer sidewall located between the light-entrance surface and the bottom surface; a light-strap structural layer (14) covering the light-entrance surface; and a light-reflection structural layer (12) covering the bottom outer surface and/or the outer sidewall of the light absorption layer (13), wherein the light-reflection structural layer (12) is configured to reflect external light entering the optical resonant cavity (10) by means of the light-trap structural layer (14) to increase a light propagation distance of the external light in the light absorption layer (13), thereby effectively improving the photon absorption efficiency of the photodetector.
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