A photoelectric conversion apparatus includes a semiconductor substrate having a first surface and a second surface, a plurality of photoelectric conversion regions including an impurity of a first conductivity type and arranged at the semiconductor substrate, a trench arranged between the photoelectric conversion regions, an impurity region including an impurity of a second conductivity type opposite to the first conductivity type and arranged along a sidewall of the trench, and a first film arranged at the first surface of the semiconductor substrate and the sidewall of the trench. The impurity region includes a first region with an impurity concentration of a first concentration and a second region with an impurity concentration of a second concentration lower than the first concentration, and a distance between the first surface and the first region is smaller than a distance between the first surface and the second region.