Invention Grant
- Patent Title: Low divergence vertical cavity surface emitting lasers, and modules and host devices incorporating the same
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Application No.: US17259426Application Date: 2019-08-13
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Publication No.: US12149050B2Publication Date: 2024-11-19
- Inventor: Jean-Francois Seurin
- Applicant: ams Sensors Asia Pte. Ltd.
- Applicant Address: SG Singapore
- Assignee: ams Sensors Asia Pte. Ltd.
- Current Assignee: ams Sensors Asia Pte. Ltd.
- Current Assignee Address: SG Singapore
- Agency: Viering, Jentschura & Partner mbB
- International Application: PCT/SG2019/050397 WO 20190813
- International Announcement: WO2020/036535 WO 20200220
- Main IPC: H01S5/183
- IPC: H01S5/183 ; G01S7/481 ; G01S17/08 ; H01S5/34 ; H01S5/42

Abstract:
The disclosure describes VCSELs operable to produce very narrow divergent light beams. The narrow divergent beam can be obtained, in part, by incorporating an additional epitaxial layer so as to increase the cavity length of the VCSEL. The increased cavity length can result in higher power in fewer larger diameter transverse modes, which can significantly reduce the output beam divergence. The additional epitaxial layer can be incorporated, for example, into a top-emitting VCSEL or bottom-emitting VCSEL.
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