Invention Grant
- Patent Title: Radio frequency switch
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Application No.: US18114403Application Date: 2023-02-27
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Publication No.: US12149235B2Publication Date: 2024-11-19
- Inventor: Jungchul Gong , Jooyul Ko
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2022-0077649 20220624,KR10-2022-0158124 20221123
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
A radio frequency (RF) switch is provided. The RF switch includes: a switch transistor that includes a first terminal to which a radio frequency (RF) signal is input, a second terminal to which the RF signal is output, a control terminal to which a first level voltage and a second level voltage are applied in response to a control signal, and a body terminal to which a bias voltage is applied; and a bias switch connected between the control terminal and the body terminal of the switch transistor and configured to turn on when the switch transistor is turned off to apply the second level voltage to the body terminal.
Public/Granted literature
- US20230421150A1 RADIO FREQUENCY SWITCH Public/Granted day:2023-12-28
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