Invention Grant
- Patent Title: Silicon carbide semiconductor device, semiconductor package, and method of inspecting silicon carbide semiconductor device
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Application No.: US17488490Application Date: 2021-09-29
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Publication No.: US12154834B2Publication Date: 2024-11-26
- Inventor: Makoto Utsumi , Masaki Miyazato
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki
- Agency: Rabin & Berdo, P.C.
- Priority: JP2020-193979 20201124
- Main IPC: H01L21/66
- IPC: H01L21/66 ; G01R31/26 ; H01L29/06 ; H01L29/10 ; H01L29/16 ; H01L29/78
Abstract:
A portion of a source pad is exposed in an opening of a passivation film. In the exposed portion of the source pad, a wiring region in which a package wiring member is to be bonded and a probe region that is a region different from the wiring region are provided. The probe region has a probe mark of a probe for an energization inspection. An area of the probe mark that overlaps the wiring region is at most 30% of an entire area of the wiring region in a plan view of the silicon carbide semiconductor device.
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