Invention Grant
- Patent Title: Power semiconductor device including a semiconductor chip
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Application No.: US17673007Application Date: 2022-02-16
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Publication No.: US12154865B2Publication Date: 2024-11-26
- Inventor: Fumiyoshi Kawashiro
- Applicant: Kabushiki Kaisha Toshiba , Toshiba Electronic Devices & Storage Corporation
- Applicant Address: JP Tokyo; JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee: Kabushiki Kaisha Toshiba,Toshiba Electronic Devices & Storage Corporation
- Current Assignee Address: JP Tokyo; JP Tokyo
- Agency: Maier & Maier, PLLC
- Priority: JP2021-148893 20210913
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/00 ; H01L23/495

Abstract:
A semiconductor device according to the present embodiment comprises a semiconductor chip comprising a first face and a second face on an opposite side to the first face, and comprising a first electrode in the first face. A first metallic member comprises a first opposed face facing the first electrode and being larger in a profile than the first electrode, the first metallic member comprising a first protruded portion protruded from the first opposed face toward the first electrode and electrically connected to the first electrode. An insulating member coats the semiconductor chip and the first metallic member.
Public/Granted literature
- US20230081341A1 SEMICONDUCTOR DEVICE Public/Granted day:2023-03-16
Information query
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