Image sensing devices are disclosed. In some implementations, an image sensing device may include a first sensor layer structured to include a plurality of first photoelectric conversion elements to receive light rays and generate photocharge corresponding to the light rays, a second sensor layer disposed below the first sensor layer, the second sensor layer structured to include a plurality of second photoelectric conversion element vertically overlapping the first photoelectric conversion elements to receive light rays and generate photocharge corresponding to the light rays having passed through the first sensor layer, and a bonding layer disposed between the first and second sensor layers, wherein the bonding layer comprises a lens layer structured to refract light rays having passed through the first sensor layer toward the second sensor layer such that an angle of incidence of the light rays is larger than a refraction angle of the light rays.