- Patent Title: Ferroelectric MFM capacitor array and methods of making the same
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Application No.: US17222193Application Date: 2021-04-05
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Publication No.: US12154938B2Publication Date: 2024-11-26
- Inventor: Chun-Chieh Lu , Mauricio Manfrini , Marcus Johannes Hendricus Van Dal , Chih-Yu Chang , Sai-Hooi Yeong , Yu-Ming Lin , Georgios Vallianitis
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: The Marbury Law Group, PLLC
- Main IPC: H10B53/30
- IPC: H10B53/30 ; H01L21/321 ; H01L21/3213 ; H01L49/02

Abstract:
Embodiments include structures and methods for fabricating an MFM capacitor having a plurality of metal contacts. An embodiment may include a first metal strip, disposed on a substrate and extending in a first direction, a ferroelectric blanket layer, disposed on the first metal strip, a second metal strip, disposed on the ferroelectric blanket layer and extending in a second direction different from the first direction, and a plurality of metal contacts disposed between the first metal strip and the second metal strip and located within an intersection region of the first metal strip and the second metal strip.
Public/Granted literature
- US20210376055A1 FERROELECTRIC MFM CAPACITOR ARRAY AND METHODS OF MAKING THE SAME Public/Granted day:2021-12-02
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