Invention Grant
- Patent Title: Power transistor devices and amplifiers with input-side harmonic termination circuits
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Application No.: US17646703Application Date: 2021-12-31
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Publication No.: US12155354B2Publication Date: 2024-11-26
- Inventor: Jitesh Vaswani , Sai Sunil Mangaonkar , Aniket Anant Wadodkar
- Applicant: NXP USA, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Agent Sherry Gourlay
- Main IPC: H03F3/191
- IPC: H03F3/191 ; H03F1/56 ; H03F3/19

Abstract:
An RF amplifier includes an amplifier input, a transistor die with a transistor and a transistor input terminal, a fundamental frequency impedance matching circuit coupled between the amplifier input and the transistor input terminal, and a harmonic frequency termination circuit coupled between the transistor input terminal and a ground reference node. The harmonic frequency termination circuit includes a first inductance coupled between the transistor input terminal and a first node, and a tank circuit coupled between the first node and the ground reference node. The tank circuit includes a first capacitance coupled between the first node and the ground reference node, and a second inductance coupled between the first node and the ground reference node. The tank circuit is configured to shunt signal energy at or near a second harmonic frequency, while appearing as an open circuit to signal energy at a fundamental frequency of operation of the RF amplifier.
Public/Granted literature
- US20230216452A1 POWER TRANSISTOR DEVICES AND AMPLIFIERS WITH INPUT-SIDE HARMONIC TERMINATION CIRCUITS Public/Granted day:2023-07-06
Information query
IPC分类: