Invention Grant
- Patent Title: Solid-state imaging element and imaging device with current feedback to input transistor that receives pixel circuit input voltage
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Application No.: US17795119Application Date: 2020-11-02
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Publication No.: US12155956B2Publication Date: 2024-11-26
- Inventor: Eiichi Nakamoto
- Applicant: Sony Semiconductor Solutions Corporation
- Applicant Address: JP Kanagawa
- Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee: Sony Semiconductor Solutions Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Michael Best & Friedrich LLP
- Priority: JP2020-016078 20200203
- International Application: PCT/JP2020/041097 WO 20201102
- International Announcement: WO2021/157148 WO 20210812
- Main IPC: H04N25/778
- IPC: H04N25/778 ; H04N25/75

Abstract:
Power consumption is reduced in a solid-state imaging element that amplifies a voltage for each column.
The solid-state imaging element includes a pixel circuit, an input transistor, a reference side current source, and a feedback circuit. The pixel circuit generates an input voltage by photoelectric conversion. The input transistor outputs an output voltage depending on a voltage between a source to which the input voltage is input and a gate from a drain. The reference side current source is connected to a reference node at a predetermined reference voltage and supplies a predetermined current. The feedback circuit feeds back a part of the current to the gate of the input transistor.
The solid-state imaging element includes a pixel circuit, an input transistor, a reference side current source, and a feedback circuit. The pixel circuit generates an input voltage by photoelectric conversion. The input transistor outputs an output voltage depending on a voltage between a source to which the input voltage is input and a gate from a drain. The reference side current source is connected to a reference node at a predetermined reference voltage and supplies a predetermined current. The feedback circuit feeds back a part of the current to the gate of the input transistor.
Public/Granted literature
- US20230066061A1 SOLID-STATE IMAGING ELEMENT AND IMAGING DEVICE Public/Granted day:2023-03-02
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