Invention Grant
- Patent Title: Error logging for a memory device with on-die wear leveling
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Application No.: US17731100Application Date: 2022-04-27
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Publication No.: US12159039B2Publication Date: 2024-12-03
- Inventor: Bryan David Kerstetter , Donald M. Morgan , Alan J. Wilson , John David Porter , Jeffrey P. Wright
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Greenberg Traurig
- Main IPC: G06F3/06
- IPC: G06F3/06

Abstract:
Systems, methods and apparatuses to log memory errors in memory devices that can perform wear leveling based on physical addresses used in the memory devices to address select memory cells. For example, a controller of a memory sub-system communicates with a memory device installed in the memory sub-system to access memory cells in the memory device. During the communication to access memory cells in the memory device, the controller can determine a memory error at a first address. If the controller transmits the first address to the memory device for memory access at the time of the memory error, the memory device converts the first address to a second address to perform the memory access. The controller can be configured to determine the second address and record, in an error log, the memory error in association with the second address.
Public/Granted literature
- US20230350574A1 Error Logging for a Memory Device with On-Die Wear Leveling Public/Granted day:2023-11-02
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