Invention Grant
- Patent Title: Internal reference resistor for non-volatile memory
-
Application No.: US17831414Application Date: 2022-06-02
-
Publication No.: US12159667B2Publication Date: 2024-12-03
- Inventor: Neil Petrie , Yoav Weinberg
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C13/00
- IPC: G11C13/00

Abstract:
An example apparatus include an array of memory cells. The example apparatus includes a memory controller coupled to the array. The memory controller can include an internal reference resistor. The memory controller can be configured to monitor memory characteristics for the array and the memory controller. The memory controller can be configured to trim the internal reference resistor to result in a target resistance value based on the memory characteristics.
Public/Granted literature
- US20230395146A1 INTERNAL REFERENCE RESISTOR FOR NON-VOLATILE MEMORY Public/Granted day:2023-12-07
Information query