Invention Grant
- Patent Title: Memory device which generates operation voltages in parallel with reception of an address
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Application No.: US18205915Application Date: 2023-06-05
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Publication No.: US12159677B2Publication Date: 2024-12-03
- Inventor: Akio Sugahara , Takaya Handa , Ryosuke Isomura , Kazuto Uehara , Junichi Sato , Norichika Asaoka , Masashi Yamaoka , Bushnaq Sanad , Yuzuru Shibazaki , Noriyasu Kumazaki , Yuri Terada
- Applicant: Kioxia Corporation
- Applicant Address: JP Tokyo
- Assignee: Kioxia Corporation
- Current Assignee: Kioxia Corporation
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Priority: JP2018-241544 20181225
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C16/04 ; G11C16/08 ; G11C16/32 ; G11C16/12 ; G11C16/26 ; H10B69/00

Abstract:
A memory device includes a memory cell array, a voltage generation circuit generating one or more voltages supplied to the memory cell array, an input/output circuit receiving an address indicating a region in the memory cell array, and a control circuit controlling operations of the memory cell array. The control circuit supplies a non-selection voltage of the voltages before a ready/busy signal changes from a ready state to a busy state.
Public/Granted literature
- US20230317177A1 MEMORY DEVICE WHICH GENERATES OPERATION VOLTAGES IN PARALLEL WITH RECEPTION OF AN ADDRESS Public/Granted day:2023-10-05
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