Invention Grant
- Patent Title: Semiconductor device having a layer stack, semiconductor arrangement and method for producing the same
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Application No.: US18397457Application Date: 2023-12-27
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Publication No.: US12159854B2Publication Date: 2024-12-03
- Inventor: Paul Frank , Thomas Heinelt , Oliver Schilling , Sven Schmidbauer , Frank Wagner
- Applicant: Infineon Technologies Austria AG
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: EP21161250 20210308
- Main IPC: H01L23/00
- IPC: H01L23/00
Abstract:
A semiconductor device includes a semiconductor wafer or a single semiconductor chip or die, and a layer stack. The layer stack comprises a first layer comprising NiSi, and a second layer comprising NiV, wherein the second layer is arranged between the first layer and the semiconductor wafer or single semiconductor chip or die.
Public/Granted literature
- US20240128226A1 Semiconductor Device Having a Layer Stack, Semiconductor Arrangement and Method for Producing the Same Public/Granted day:2024-04-18
Information query
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