- Patent Title: Method for fabricating metal gate devices and resulting structures
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Application No.: US18358742Application Date: 2023-07-25
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Publication No.: US12159916B2Publication Date: 2024-12-03
- Inventor: Po-Chi Wu , Chai-Wei Chang , Jung-Jui Li , Ya-Lan Chang , Yi-Cheng Chao
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/28 ; H01L21/321 ; H01L21/3213 ; H01L29/49 ; H01L29/66 ; H01L29/78
Abstract:
A method for fabricating a semiconductor component includes forming an interlayer dielectric (ILD) layer on a substrate, forming a trench in the interlayer dielectric layer, forming a metal gate in the trench, removing a portion of the metal gate protruding from the ILD layer, reacting a reducing gas with the metal gate, and removing a top portion of the metal gate.
Public/Granted literature
- US20230395689A1 Method for Fabricating Metal Gate Devices and Resulting Structures Public/Granted day:2023-12-07
Information query
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