- Patent Title: Methods for etching a material layer for semiconductor applications
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Application No.: US17770019Application Date: 2019-12-23
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Publication No.: US12165877B2Publication Date: 2024-12-10
- Inventor: Zhigang Wang , Jiao Yang , Heng Wang , Alfredo Granados , Jon C. Farr , Ruizhe Ren
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson + Sheridan, LLP
- International Application: PCT/CN2019/127495 WO 20191223
- International Announcement: WO2021/127862 WO 20210701
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/02 ; H01L21/3213 ; H01J37/32
Abstract:
An apparatus and method for etching a material layer with a cyclic etching and deposition process. The method for etching a material layer on a substrate includes: (a) etching at least a portion of a material layer (302) on a substrate (101) in an etch chamber (100) to form an open feature (360) having a bottom surface (312) and sidewalls in the material layer (302); (b) forming a protection layer (314) on the sidewalls and the bottom surface (312) of the open feature (360) from a protection layer (314) gas mixture comprising at least one carbon-fluorine containing gas; (c) selectively removing the protection layer (314) formed on the bottom surface (312) of the open feature (360) from a bottom surface (312) open gas mixture comprising the carbon-fluorine containing gas; and (d) continuingly etching the material layer (302) from the bottom surface (312) of the open feature (360) until a desired depth of the open feature (360) is reached.
Public/Granted literature
- US20220399205A1 METHODS FOR ETCHING A MATERIAL LAYER FOR SEMICONDUCTOR APPLICATIONS Public/Granted day:2022-12-15
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