Invention Grant
- Patent Title: Power storage pack, semiconductor device, and semiconductor device manufacturing method
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Application No.: US18674329Application Date: 2024-05-24
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Publication No.: US12165958B2Publication Date: 2024-12-10
- Inventor: Toshifumi Ishida , Kouki Yamamoto
- Applicant: Nuvoton Technology Corporation Japan
- Applicant Address: JP Kyoto
- Assignee: Nuvoton Technology Corporation Japan
- Current Assignee: Nuvoton Technology Corporation Japan
- Current Assignee Address: JP Kyoto
- Agency: Rimon P.C.
- Priority: JP2022-205527 20221222
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/495

Abstract:
A power storage pack includes: a power storage cell; a power storage tab; a protection circuit substrate; a semiconductor element; and a metal plate for power storage tab joint that is connected to the semiconductor element on the first main surface of the metal plate for power storage tab joint and that includes a portion whose thickness is at most 0.2 mm. The metal plate for power storage tab joint is joined to the power storage tab on the second main surface of the metal plate for power storage tab joint to include an overlap portion in which the power storage tab, the metal plate for power storage tab joint, the semiconductor element, and the protection circuit substrate overlap each other; and there is a portion in which a region that may be the conduction path between the power storage tab and the protection circuit substrate overlaps the overlap portion.
Public/Granted literature
- US20240312881A1 POWER STORAGE PACK, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD Public/Granted day:2024-09-19
Information query
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